2SA935 transistor (pnp) features power dissipation p cm : 0.75 w (tamb=25 ) collector current i cm : -0.7 a collector-base voltage v (br)cbo : -80 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -50 a, i e =0 -80 v collector-emitter breakdown voltage v (br)ceo ic= -2 ma, i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e = -50 a, i c =0 -5 v collector cut-off current i cbo v cb = -50 v, i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v, i c =0 -0.5 a dc current gain h fe(1) v ce = -3 v, i c = -100 ma 82 390 collector-emitter saturation voltage v ce(sat) i c = -500 ma, i b = -50 ma -0.4 v transition frequency f t v ce = -10 v, i c = -50 ma 100 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 20 pf classification of h fe(1) rank p q r range 82-180 120-270 180-390 marking 1 2 3 to-92l 1. emitter 2. collector 3. base 2SA935 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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